BSH111BK_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 55 V, N-channel Trench MOSFET

BSH111BK
55 V, N-channel Trench MOSFET
26 November 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 3 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
V_GS = 4.5 V; T_sp = 25 °C
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 200 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
55
V
-10 -
10
V
-
-
210 mA
-
-
335 mA
-
2.3 4
Ω
[1] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm}²_.
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