BSH111 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
s Logic level translator.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s