BRS212 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Breakover diodes

Philips Semiconductors
Breakover diodes
Product specification
BRS212 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Their intended
application is protection of line based
telecommunications
equipment
against voltage transients.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_(BO)
Breakover voltage
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
I_H
Holding current
I_PP
Non-repetitive peak pulse
current (CCITT K17)
MIN. TYP. MAX. UNIT
- 140 -
V
- 160 -
V
- 180 -
V
- 200 -
V
- 220 -
V
- 240 -
V
- 260 -
V
- 280 -
V
150 -
- mA
-
-
40
A
OUTLINE - SOD106
date code
XXX denotes voltage grade
SYMBOL
YM
212
XXX
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_D
I_PP
I_TSM
I²t
dI_T/dt
P_tot
P_TM
T_stg
T_j
T_L
Continuous voltage
Non-repetitive peak pulse
current
Non repetitive surge peak
on-state current
I²t for fusing
Rate of rise of on-state current
after V_(BO) turn-on
Continuous dissipation on
infinite heatsink
Peak dissipation
Storage temperature
Operating junction temperature
Maximum terminal temperature
for soldering
BRS212-140
BRS212-160
BRS212-180
BRS212-200
BRS212-220
BRS212-240
BRS212-260
BRS212-280
5/310 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T_j = 70 ˚C prior to surge
t_p = 10 ms
t_p = 10 µs
T_sp = 50˚C
t_p = 1 ms; T_a = 25˚C
soldering time = 10 s
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 40
-
-
MAX.
105
120
135
150
165
180
195
210
40
UNIT
V
V
V
V
V
V
V
V
A
15
A
1.1
A²s
50
A/µs
4
W
50
W
150
˚C
150
˚C
260
˚C
January 1997
1
Rev 1.000