BR211SM Datasheet, PDF (1/6 Pages) NXP Semiconductors – Breakover diodes

Philips Semiconductors
Breakover diodes
Preliminary specification
BR211SM series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling capability. Typical
application is transient overvoltage
protection in telecommunications
equipment.
OUTLINE - SOD106
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_(BO)
I_H
I_TSM
BR211SM-140 to BR211SM-280
Breakover voltage
Holding current
Non-repetitive peak current
MIN.
140
150
-
SYMBOL
MAX. UNIT
280 V
-
mA
40
A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_D
Continuous voltage
I_TSM1
I_TSM2
I²t
dI_T/dt
P_tot
P_TM
T_stg
T_a
T_vj
Non repetitive peak current
Non repetitive on-state current
I²t for fusing
Rate of rise of on-state current
after V_(BO) turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T_j = 70 ˚C prior to surge
t_p = 10 ms
t_p = 10 µs
T_a = 25˚C
t_p = 1 ms; T_a = 25˚C
off-state
on-state
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-sp}
R_{th j-a}
Z_{th j-a}
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
pcb mounted; minimum footprint
t_p = 1 ms
MIN.
-
-
-
-
-
-
-
- 40
-
-
MAX.
75% of
V_(BO)typ
40
UNIT
V
A
15
A
1.1
A²s
50
A/µs
1.2
W
50
W
150
˚C
70
˚C
150
˚C
MIN. TYP. MAX. UNIT
-
-
12 K/W
- 100 - K/W
- 2.62 - K/W
August 1996
1
Rev 1.100