BLU6H0410L-600P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
Table 1. Application information
Typical RF performance at V_DS = 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal
f
I_Dq
P_L(AV)
P_L(M)
G_p
_D IMD3
(MHz) (mA) (W)
(W)
(dB) (%) (dBc)
pulsed, class-AB ^[1]
860
1.3
-
600
20
58 -
[1] Measured at  = 10 %; t_p = 1 ms.
1.2 Features and benefits
 Excellent ruggedness (VSWR  40 : 1 through all phases)
 Optimum thermal behavior and reliability, R_th(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range