BLS8G2731L-400P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS8G2731L-400P;
BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 1 — 26 May 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.1 GHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C; t_p = 50 s;  = 2 %; I_Dq = 200 mA; in a class-AB demo test
circuit.
Test signal
f
(GHz)
V_DS P_L(1dB)
(V) (W)
G_p ^[1]
(dB)
_D ^[1]
(%)
P_L(2dB)
(W)
G_p ^[2]
(dB)
_D ^[2]
(%)
pulsed RF
2.7 to 2.9 32 540
11
45
610
10
46
2.9 to 3.1 32 490
12
47
550
11
49
2.7 to 3.1 32 530
12
45
590
11
47
[1] at 1 dB gain compression.
[2] at 2 dB gain compression.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for S-band operation
 Excellent thermal stability
 Easy power control
 Integrated dual sided ESD protection enables excellent off-state isolation
 High flexibility with respect to pulse formats
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz