BLS7G3135LS-200_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS7G3135LS-200
LDMOS S-band radar power transistor
Rev. 2 — 23 September 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
3100 MHz to 3500 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Test signal
f
(GHz)
V_DS
P_L
G_p
_D
t_r
t_f
(V)
(W)
(dB)
(%) (ns)
(ns)
pulsed RF
3.1
32
200 12
48
8
6
3.3
32
200 12
46
8
6
3.5
32
200 12
43
8
6
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Excellent thermal stability
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Internally matched for ease of use (input and output)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 S-band radar applications in the frequency range 3100 MHz to 3500 MHz