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| BLS7G3135L-350P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – BLS7G3135L-350P_15 | |||
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BLS7G3135L-350P;
BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 3 â 29 October 2013
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C; tp = 300 ïs; ï¤ = 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal
f
(GHz)
VDS
PL
Gp
ï¨D
(V)
(W) (dB)
(%)
tr
tf
(ns)
(ns)
pulsed RF
3.1
32
350 12
43
5
5
3.3
32
350 12
43
5
5
3.5
32
350 10
39
5
5
1.2 Features and benefits
ï® Easy power control
ï® Integrated ESD protection
ï® High flexibility with respect to pulse formats
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation (3.1 GHz to 3.5 GHz)
ï® Internally matched for ease of use
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
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