BLS7G2730L-200P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS7G2730L-200P;
BLS7G2730LS-200P
LDMOS S-band radar power transistor
Rev. 3 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
2700 MHz to 3000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C.
Test signal
f
V_DS
P_L
G_p
_D
t_r
t_f
(GHz)
(V)
(W)
(dB)
(%) (ns)
(ns)
Class-AB production test circuit
pulsed RF ^[1]
2.7 to 3.0
32
200 12
48
8
5
Application circuit
pulsed RF ^[2]
2.7 to 3.0
32
220 12.5
50
20
6
pulsed RF ^[3]
2.9 to 3.1
32
220 12.5
50
20
6
[1] t_p = 300 s;  = 10 %; I_Dq = 100 mA
[2] t_p = 3000 s;  = 20 %; I_Dq = 50 mA
[3] t_p = 500 s;  = 20 %; I_Dq = 50 mA
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Excellent thermal stability
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 S-band radar applications in the frequency range 2700 MHz to 3000 MHz