BLS7G2729L-350P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 5 — 16 May 2014
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 2.9 GHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 200 mA; in a class-AB
production test circuit.
Test signal
f
V_DS
P_L
G_p
_D
t_r
t_f
(GHz)
(V)
(W)
(dB) (%)
(ns) (ns)
pulsed RF
2.7 to 2.9 32
350
13
50
8
5
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for S-band operation (2.7 GHz to 2.9 GHz)
 Excellent thermal stability
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz