BLS7G2325L-105_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Power LDMOS transistor

BLS7G2325L-105
Power LDMOS transistor
Rev. 2 — 19 July 2011
Product data sheet
1. Product profile
1.1 General description
105 W LDMOS power transistor for S-band radar applications at frequencies from
2300 MHz to 2500 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Mode of operation
f
I_Dq
V_DS
P_L(AV)
G_p
_D
(MHz)
(mA) (V)
(W)
(dB) (%)
Pulse CW
2300 to 2500
900
30
110
16.5 55
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz
frequency range