BLS6G3135-20_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS S-Band radar power transistor

BLS6G3135-20;
BLS6G3135S-20
LDMOS S-Band radar power transistor
Rev. 4 — 11 March 2013
Product data sheet
1. Product profile
1.1 General description
20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 50 mA; in a class-AB
production test circuit.
Mode of operation f
V_DS
P_L
G_p
_D
t_r
t_f
(GHz) (V)
(W)
(dB)
(%)
(ns)
(ns)
Pulsed RF
3.1 to 3.5 32
20
15.5
45
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I_Dq of 50 mA, a t_p of 300 s and a  of 10 %:
 Output power = 20 W
 Power gain = 15.5 dB
 Efficiency = 45 %
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (3.1 GHz to 3.5 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)