BLS6G2735L-30_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – S-band LDMOS transistor

BLS6G2735L-30;
BLS6G2735LS-30
S-band LDMOS transistor
Rev. 3 — 24 September 2012
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.5 GHz.
Table 1. Application information
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 50 mA.
Test signal
f
V_DS
P_L
G_p
_D
t_r
t_f
(GHz)
(V)
(W)
(dB) (%)
(ns) (ns)
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz
pulsed RF
3.1 to 3.5 32
30
13
50
20
10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
pulsed RF
2.7 to 3.3 32
35
14
50
20
10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
pulsed RF
2.7 to 3.5 32
30
12
47
20
10
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2.7 GHz to 3.5 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz