BLS6G2731S-130_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – LDMOS S-band radar power transistor

BLS6G2731S-130
LDMOS S-band radar power transistor
Rev. 2 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 °C; t_p = 300 μs; δ = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
V_DS P_L
(V) (W)
G_p η_D
t_r
t_f
(dB) (%) (ns)
(ns)
pulsed RF
2.7 to 3.1 32 130
12 50
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an I_Dq of 100 mA, a t_p of 300 μs with δ of 10 %:
‹ Output power = 130 W
‹ Power gain = 12 dB
‹ Efficiency = 50 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (2.7 GHz to 3.1 GHz)
„ Internally matched for ease of use
„ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
„ S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range