BLS6G2731-6G_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – LDMOS S-Band radar power transistor

BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 2 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at T_case = 25 C; t_p = 100 s;  = 10 %; I_Dq = 25 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
V_DS P_L
(V) (W)
G_p _D
t_r
t_f
(dB) (%) (ns)
(ns)
pulsed RF
2.7 to 3.1 32 6
15 33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. You must use a ground strap or touch the PC case or other
grounded source before unpacking or handling the hardware.
1.2 Features and benefits
 Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an I_Dq of 25 mA, a t_p of 100 s and a  of 10 %:
 Output power = 6 W
 Power gain = 15 dB
 Efficiency = 33 %
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2.7 GHz to 3.1 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range