BLS2933-100 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Microwave power LDMOS transistor

BLS2933-100
Microwave power LDMOS transistor
Rev. 01 — 1 August 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications
in the 2.9 GHz to 3.3 GHz frequency range.
Table 1: Typical performance
t_p = 200 µs; δ = 12 %; T_case = 25 °C; in a class-AB production test circuit.
Mode of operation
f
V_DS
P_L
G_p
η_D
(GHz)
(V)
(W)
(dB) (%)
class AB
2.9 to 3.3 32
100
8
40
I_Dq
(mA)
20
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I Excellent thermal stability
I Designed for broadband operation (2.9 GHz to 3.3 GHz)
I Internally matched for ease of use
1.3 Applications
I S-band radar applications