BLP8G27-10_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Power LDMOS transistor

BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at T_case = 25 C; I_Dq = 110 mA; in a class-AB application circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D
ACPR_5M
(MHz) (mA) (V) (dBm) (dB) (%) (dBc)
Pulsed CW
2700
110
28 33
17
19
-
2-carrier W-CDMA ^[1]
2700
110
28 33
17
22
47.3
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Excellent thermal stability
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 CDMA
 W-CDMA
 GSM EDGE
 MC-GSM
 LTE
 WiMAX