BLP8G21S-160PV_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLP8G21S-160PV
Power LDMOS transistor
Rev. 3 — 1 July 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to
2025 MHz.
Table 1. Typical performance
Typical RF performance per section at T_case = 25 C in a common source class-AB production test
circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1880 to 1920
600 28 20
17.5 31 30 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
 Designed for broadband operation (1880 MHz to 2025 MHz)
 Decoupling leads to enable improved video bandwidth
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Internally matched for ease of use
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to
2025 MHz frequency range