BLP8G20S-80P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to
2200 MHz.
Table 1. Typical performance
Typical RF performance per section at T_case = 25 C in a common Doherty demo board.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
300
28
14.2
17
47 30 ^[1]
1880 to 1920
300
28
14.2
16.8 46 30 ^[1]
2110 to 2170
300
28
14.2
16
43 30 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
 Designed for broadband operation (1800 MHz to 2200 MHz)
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Internally matched for ease of use
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to
2200 MHz frequency range