BLP7G22-10_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – LDMOS driver transistor

BLP7G22-10
LDMOS driver transistor
Rev. 2 — 30 May 2013
Product data sheet
1. Product profile
1.1 General description
10W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at T_case = 25 C; I_Dq = 110 mA; in a class-AB application circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D
ACPR_5M
(MHz) (mA) (V) (W)
(dB) (%) (dBc)
Pulsed CW
2700
110
28 2
14.5 26
-
1-carrier W-CDMA
748
110
28 0.7
27.5 13.5 43 ^[1]
748
110
28 2
27.5 25
40
2-carrier W-CDMA
2140
110
28 0.7
17.4 13
51
2140
110
28 2
17.4 25
40
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF;
RF performance at V_DS = 28 V; I_Dq = 110 mA.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Excellent thermal stability
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 CDMA
 W-CDMA
 GSM EDGE
 MC-GSM
 LTE
 WiMAX