BLP7G22-05_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – LDMOS driver transistor

BLP7G22-05
LDMOS driver transistor
Rev. 2 — 20 August 2013
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for base station applications from
700 MHz to 2700 MHz band.
Table 1. Application information
Typical RF performance at T_case = 25 C; in a class-AB application circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D
(MHz) (mA) (V) (W)
(dB) (%)
IS-95 ^[1]
788
60
28 1
23.9 25
2-carrier W-CDMA ^[2]
2140
55
28 1
16.7 27
Pulsed CW
2700
55
28 5
14.5 45
ACPR
(dBc)
41
40
-
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Test signal: 2-carrier W-CDMA: carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01% probability on CCDF;
RF performance at V_DS = 28 V; I_Dq = 55 mA.
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Designed for broadband operation
 Excellent thermal stability
 High power gain
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 CDMA
 W-CDMA
 GSM EDGE
 MC-GSM
 LTE
 WiMAX