BLP7G07S-140P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLP7G07S-140P
Power LDMOS transistor
Rev. 3 — 29 March 2013
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Test signal
f
(MHz)
2-carrier W-CDMA
724 to 769
790 to 821
V_DS P_L(AV)
(V) (W)
28 35
28 35
G_p
(dB)
20.9
20.2
_D
(%)
29.6
29.0
ACPR_5M
(dBc)
36.3 ^[1]
35.5 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
700 MHz to 1000 MHz frequency range.