BLP25M710_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Broadband LDMOS driver transistor

BLP25M710
Broadband LDMOS driver transistor
Rev. 1 — 29 August 2013
Product data sheet
1. Product profile
1.1 General description
A 10 W LDMOS power transistor for broadcast and industrial applications in the
HF to 2500 MHz band.
Table 1. Application information
Test signal
f
(MHz)
I_Dq
(mA)
V_DS P_L
G_p
(V) (W) (dB)
DVB-T
858
110
28 1
20.9
Pulsed RF ^[3] 2450
80
28 10 16.2
_D
(%)
17.1
64.5
IMD_shldr
(dBc)
47.5 ^[1]
-
PAR
(dB)
9.5 ^[2]
-
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
[3] Measured at  = 10 %, t_p = 12 s.
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 2500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications