BLP15M7160P_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLP15M7160P
Power LDMOS transistor
Rev. 3 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at T_h = 25 C in a common source test circuit.
Test signal
f
V_DS
I_Dq
P_L(AV)
(MHz)
(V)
(mA) (W)
pulsed, class-B
860
28
100
-
P_L(M)
(W)
160
G_p
_D
(dB) (%)
20
62
1.2 Features and benefits
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Communication transmitter applications in the HF to 1500 MHz frequency range
 Industrial applications in the HF to 1500 MHz frequency range
 Single product Doherty applications