BLP10H610_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Broadband LDMOS driver transistor

BLP10H610
Broadband LDMOS driver transistor
Rev. 3 — 25 September 2014
Product data sheet
1. Product profile
1.1 General description
A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW
27
40
60
80
88 to 108
400 to 450
950 to 1225
Pulsed RF ^[1]
860
1190 to 1410
DVB-T
860
[1] t_p= 100 s;  = 10 %.
V_DS
P_L
G_p
_D
(V)
(W)
(dB)
(%)
50
10
26.7
46
50
20
25
65
50
19
24
65
50
19
25
67
50
16
25
62
50
>14
>25.5
>62
50
>13
>16
>42
50
10
22
60
45
11
>14
-
50
1
>21
-
1.2 Features and benefits
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 1400 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications