BLP05M7200_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Power LDMOS transistor

BLP05M7200
Power LDMOS transistor
Rev. 2 — 18 November 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for various applications such as ISM and RF plasma
lighting at frequencies from 425 MHz to 450 MHz.
Table 1. Typical performance
RF performance at T_case = 25 C, I_Dq = 2 mA in an application circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
CW
440
28
210
21
81
1.2 Features and benefits
 High efficiency
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Easy power control
 Designed for ISM operation (425 MHz to 450 MHz)
 Input integration for simple board design
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for CW applications in the 425 MHz to 450 MHz frequency range
such as ISM and RF plasma lighting.