BLM7G22S-60PB_15 Datasheet, PDF(1/21 Page) NXP Semiconductors

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BLM7G22S-60PB_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – LDMOS 2-stage power MMIC

BLM7G22S-60PB;

BLM7G22S-60PBG

LDMOS 2-stage power MMIC

Rev. 4 â 1 July 2015

Product data sheet

1. Product profile

1.1 General description

The BLM7G22S-60PB(G) is a dual path, 2-stage power MMIC using NXPâs state of the art

GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the

frequency range from 2100 MHz to 2400 MHz. Available in gull wing or flat lead outline.

Table 1. Application performance

Typical RF performance at Tcase = 25 ï°C; IDq1 = 75 mA; IDq2 = 233 mA.

Test signal: 3GPP test model 1; 64 DPCH; clipping at 46 %; PAR = 8.4 dB at 0.01% probability on

CCDF per carrier; carrier spacing = 5 MHz; per section unless otherwise specified in a class-AB

production circuit.

Test signal

VDS

PL(AV)

ï¨D

ACPR

(MHz)

(V) (W)

(dB) (%) (dBc)

2-carrier W-CDMA

2140

1.6

31.5 11.3 ï43

2-carrier W-CDMA

2350

1.6

29.3 10.7 ï42

1.2 Features and benefits

ï® Integrated temperature compensated bias

ï® Biasing of individual stages is externally accessible

ï® Integrated current sense

ï® Integrated ESD protection

ï® Excellent thermal stability

ï® High power gain

ï® On-chip matching for ease of use (input matched to 50 ï; output partially matched)

ï® Designed for broadband operation (frequency 2100 MHz to 2400 MHz)

ï® Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

RF power MMIC for W-CDMA base stations in the 2100 MHz to 2400 MHz frequency

range.

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