BLM7G1822S-20PB_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – LDMOS 2-stage power MMIC

BLM7G1822S-20PB;
BLM7G1822S-20PBG
LDMOS 2-stage power MMIC
Rev. 3 — 1 July 2015
Product data sheet
1. Product profile
1.1 General description
The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using NXP’s state of
the art GEN7 LDMOS technology. This multiband device is perfectly suited as general
purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz.
Available in gull wing or straight lead outline.
Table 1. Performance
Typical RF performance at T_case = 25 C; I_Dq1 = 27 mA; I_Dq2 = 76 mA.
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section
unless otherwise specified in a class-AB production circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
ACPR_5M
(MHz)
(V) (W)
(dB) (%) (dBc)
single carrier W-CDMA
2167.5 28
2
32.3 23
41
1.2 Features and benefits
 Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
 High section-to-section isolation enabling multiple combinations
 Integrated temperature compensated bias
 Biasing of individual stages is externally accessible
 Integrated ESD protection
 Excellent thermal stability
 High power gain
 On-chip matching for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base
stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are
the following as also depicted in Section 8.1:
 Dual section or single ended
 Doherty
 Quadrature combined
 Push-pull