BLM6G22-30_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – W-CDMA 2100 MHz to 2200 MHz power MMIC

BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 4 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1. Typical performance
Typical RF performance at T_h = 25 °C.
Mode of operation f
V_DS
(MHz)
(V)
2-carrier W-CDMA 2110 to 2170 28
P_L(AV)
(W)
2
G_p
η_D IMD3
(dB) (%) (dBc)
29.5 9
−48^[1]
ACPR
(dBc)
−50^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
‹ Average output power = 2 W
‹ Power gain = 30 dB (typ)
‹ Efficiency = 9 %
‹ IMD3 = −48 dBc
‹ ACPR = −50 dBc
„ Integrated temperature compensated bias
„ Excellent thermal stability
„ Biasing of individual stages is externally accessible
„ Integrated ESD protection
„ Small component size, very suitable for PA size reduction
„ On-chip matching (input matched to 50 Ohm, output partially matched)
„ High power gain
„ Designed for broadband operation (2100 MHz to 2200 MHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)