BLL8H1214L-250_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS L-band radar power transistor

BLL8H1214L-250;
BLL8H1214LS-250
LDMOS L-band radar power transistor
Rev. 2 — 13 January 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Test signal
f
V_DS P_L
G_p _D
t_r
t_f
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55
15
5
1.2 Features and benefits
 Easy power control
 Integrated dual side ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (1.2 GHz to 1.4 GHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range