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| BLL8H0514L-130_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS driver transistor | |||
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BLL8H0514L-130;
BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 â 9 February 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1. Application information
Typical RF performance at Tcase = 25 ï°C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp
ï¤ VDS PL Gp RLin ï¨D Pdroop(pulse) tr
tf
(MHz)
(ïs) (%) (V) (W) (dB) (dB) (%) (dB)
(ns) (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0
15 8
1200 to 1400 300 10 50 130 17 10 50 0
15 8
1.2 Features and benefits
ï® Easy power control
ï® Integrated dual side ESD protection
ï® High flexibility with respect to pulse formats
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation (0.5 GHz to 1.4 GHz)
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
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