BLL8H0514-25_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLL8H0514-25
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at T_case = 25 C; I_Dq = 50 mA; in a class-AB application circuit.
Test signal f
t_p
 V_DS P_L G_p RL_in _D P_droop(pulse) t_r
t_f
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns) (ns)
pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
86
1200 to 1400 300 10 50 25 19 10 50 0.05
86
1.2 Features and benefits
 Easy power control
 Integrated dual side ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (0.5 GHz to 1.4 GHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
Simplified outline Graphic symbol


[1]




V\P