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| BLL6H1214P2S-250_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – LDMOS L-band radar power module | |||
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BLL6H1214P2S-250
LDMOS L-band radar power module
Rev. 1 â 12 August 2014
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power module intended for L-band radar applications in the frequency
range from 1.2 GHz to 1.4 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 ï°C; tp = 1.8 ms; ï¤ = 30 %; IDq = 200 mA; Pi = 26 dBm; in a
class-AB production test circuit.
Test signal
f
(MHz)
VDS PL
(V) (W)
Gp
ï¨add tr
tf
(dB) (%) (ns) (ns)
pulsed RF
1195 to 1405
45 190 to 290
27
48
15 5
1.2 Features and benefits
ï® Input/output 50 ï matched
ï® High flexibility with respect to pulse formats
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation (1.2 GHz to 1.4 GHz)
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz
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