BLL6H1214L_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS L-band radar power transistor

BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 3 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1. Test information
Typical RF performance at T_case = 25 C; t_p = 300 s;  = 10 %; I_Dq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
V_DS P_L
G_p _D
t_r
t_f
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50 250
17 55
15
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an I_Dq of 100 mA, a t_p of 300 s with  of 10 %:
 Output power = 250 W
 Power gain = 17 dB
 Efficiency = 55 %
 Easy power control
 Integrated ESD protection
 High flexibility with respect to pulse formats
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (1.2 GHz to 1.4 GHz)
 Internally matched for ease of use
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC