BLL6H0514-25_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – LDMOS driver transistor

BLL6H0514-25
LDMOS driver transistor
Rev. 04 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at T_case = 25 °C; I_Dq = 50 mA; in a class-AB application circuit.
Mode of operation
f
t_p
δ
V_DS P_L G_p
RL_in η_D
(MHz)
(μs) (%) (V) (W) (dB) (dB) (%)
pulsed RF
960 to 1215
128 10 50 25 21 10 58
1200 to 1400 300 10 50 25 19 10 50
P_droop(pulse)
(dB)
0.05
0.05
t_r
t_f
(ns) (ns)
8
6
8
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (0.5 GHz to 1.4 GHz)
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range