BLF9G38LS-90P_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF9G38LS-90P
Power LDMOS transistor
Rev. 2 — 3 July 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in the Doherty application demo circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V) (W)
(dB) (%)
IS-95
3400 to 3600 28 15.1
12.7 37.0
ACPR
(dBc)
37 ^[1]
[1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8  13; PAR = 9.7 dB at 0.01 %
probability.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifier for LTE base stations and multi carrier applications in the
3400 MHz to 3600 MHz frequency range