BLF8G27LS-150V_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G27LS-150V;
BLF8G27LS-150GV
Power LDMOS transistor
Rev. 3 — 26 June 2013
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18
30 30^[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Decoupling leads to enable improved video bandwidth (60 MHz typical)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range