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BLF8G27LS-100V_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF8G27LS-100V;
BLF8G27LS-100GV
Power LDMOS transistor
Rev. 4 â 26 September 2013
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
ï¨D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2500 to 2700
900 28 25
17
28 ï32 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High efficiency
ï® Low Rth providing excellent thermal stability
ï® Decoupling leads to enable improved video bandwidth (110 MHz typical)
ï® Designed for broadband operation (2500 MHz to 2700 MHz)
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent pre-distortability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
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