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BLF8G22LS-270V_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF8G22LS-270V;
BLF8G22LS-270GV
Power LDMOS transistor
Rev. 2 â 3 December 2012
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
IDq
VDS PL(AV)
Gp
ï¨D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 2400 28 80
17.3 29 ï29 [1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High efficiency
ï® Low Rth providing excellent thermal stability
ï® Designed for broadband operation
ï® Decoupling leads to enable improved video bandwidth (80 MHz typical)
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent pre-distortability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency range
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