BLF8G22LS-200V_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G22LS-200V;
BLF8G22LS-200GV
Power LDMOS transistor
Rev. 2 — 10 December 2012
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 2000 28 55
19.0 29 30 ^[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation
 Decoupling leads to enable improved video bandwidth (80 MHz typical)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency range