BLF8G20LS-400PV_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G20LS-400PV;
BLF8G20LS-400PGV
Power LDMOS transistor
Rev. 4 — 28 July 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1995 3400 28 95
19
28 33 ^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz; f₁ = 1807.5 MHz; f₂ = 1812.5 MHz; f₃ = 1872.5 MHz; f₄ = 1877.5 MHz.
1.2 Features and benefits
 Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing
 Excellent ruggedness
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to
1995 MHz frequency range