BLF8G20LS-260A_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G20LS-260A
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in an asymmetrical Doherty production test circuit.
Test signal
f
V_DS P_L(AV)
G_p
_D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA^[1]
1805 to 1880
28 50
15.9 45.5 29^[2]
[1] V_DS = 28 V; I_Dq = 750 mA (main); V_GS(amp)peak = 0.80 V.
[2] Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
 Excellent ruggedness
 High-efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (1805 MHz to 1880 MHz)
 Asymmetric design to achieve optimum efficiency across the band
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range