BLF8G19LS-170BV_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G19LS-170BV
Power LDMOS transistor
Rev. 3 — 1 May 2015
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 1990 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV) G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA ^[1]
1930 to 1990
1300 32 60
18.0 32 31
1-carrier W-CDMA ^[2]
1805 to 1880
1300 28 33
19.8 29 40
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Decoupling leads to enable improved video bandwidth (100 MHz typical)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Integrated current sense
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifier for W-CDMA base stations and multi carrier applications in the
1800 MHz to 1990 MHz frequency range