BLF8G10LS-300P_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G10LS-300P
Power LDMOS transistor
Rev. 2 — 17 December 2013
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
758 to 803
28 65
20.5 32
35 ^[1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
 RF power amplifier for multi standards and multi carrier applications in the 700 MHz to
1000 MHz frequency range