BLF8G10LS-270V_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G10LS-270V;
BLF8G10LS-270GV
Power LDMOS transistor
Rev. 1 — 3 December 2012
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 790 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
V_DS P_L(AV)
G_p
_D ACPR_5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
28 67
19.5 31 37^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 10 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (790 MHz to 960 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Decoupling leads to enable improved video bandwidth (55 MHz typical)
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing and straight lead versions
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
790 MHz to 960 MHz frequency range