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BLF8G10LS-160V_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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BLF8G10LS-160V
Power LDMOS transistor
Rev. 2 â 24 October 2012
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 925 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 ï°C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
ï¨D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
925 to 960
1100 30 35
19.9 30 ï38[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
ï® Excellent ruggedness
ï® High efficiency
ï® Low Rth providing excellent thermal stability
ï® Decoupling leads to enable improved video bandwidth (60 MHz typical)
ï® Designed for broadband operation (925 MHz to 960 MHz)
ï® Lower output capacitance for improved performance in Doherty applications
ï® Designed for low memory effects providing excellent pre-distortability
ï® Internally matched for ease of use
ï® Integrated ESD protection
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® RF power amplifiers for W-CDMA base stations and multi carrier applications in the
925 MHz to 960 MHz frequency range
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