BLF8G10L-160_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G10L-160;
BLF8G10LS-160
Power LDMOS transistor
Rev. 3 — 16 February 2012
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
920 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
920 to 960
1100 30 35
19.7 29 38 ^[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R_th providing excellent thermal stability
 Designed for broadband operation (920 MHz to 960 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
920 MHz to 960 MHz frequency range