BLF8G09LS-400PW_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G09LS-400PW;
BLF8G09LS-400PGW
Power LDMOS transistor
Rev. 4 — 28 July 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for base station applications at frequencies from
716 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
I_Dq
V_DS P_L(AV)
G_p
_D ACPR_5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
716 to 728 3400 28 95
20.6 30 35 ^[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing.
1.2 Features and benefits
 Excellent ruggedness
 Device can operate with the supply current delivered through the video leads
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation
 Lower output capacitance for improved performance in Doherty applications
 Decoupling leads to enable improved video bandwidth (45 MHz typical)
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 716 MHz to
960 MHz frequency range