BLF8G09LS-270W_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – Power LDMOS transistor

BLF8G09LS-270W;
BLF8G09LS-270GW
Power LDMOS transistor
Rev. 2 — 17 January 2014
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 716 MHz to 960 MHz.
Table 1. Typical performance
Typical RF performance at T_case = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
f
V_DS P_L(AV)
G_p
_D ACPR_5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
716 to 728
28 67
20
33 35^[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
 Excellent ruggedness
 Device can operate with the supply current delivered through the video leads
 High efficiency
 Low thermal resistance providing excellent thermal stability
 Designed for broadband operation (716 MHz to 960 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Decoupling leads to enable improved video bandwidth (55 MHz typical)
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Design optimized for gull-wing and straight lead versions
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
716 MHz to 960 MHz frequency range