BLF888A_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 5 — 4 November 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at V_DS = 50 V unless otherwise specified.
Mode of operation
f
P_L(AV)
(MHz)
(W)
P_L(M)
(W)
G_p
_D
(dB) (%)
RF performance in a common source narrowband test circuit
CW
650
-
600 20 67
CW (42 V)
650
-
500 20 69
2-tone, class-AB
pulsed, class-AB ^[1]
f₁ = 860; f₂ = 860.1
860
250
-
21 46
-
600 20 58
DVB-T (8k OFDM)
858
110
-
21 31
858
125
-
21 32.5
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
858
110
-
20 30
858
120
-
20 31
IMD3
(dBc)
-
-
32
-
-
-
-
-
IMD_shldr
(dBc)
-
-
-
-
32 ^[2]
30 ^[2]
32 ^[2]
31 ^[2]
PAR
(dB)
-
-
-
-
8.2 ^[3]
8.0 ^[3]
8.0 ^[3]
7.8 ^[3]
[1] Measured at  = 10 %; t_p = 100 s.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness (VSWR  40 : 1 through all phases)
 Optimum thermal behavior and reliability, R_th(j-c) = 0.15 K/W
 Suitable for CW UHF and ISM applications
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC